| Product Attribute |
Attribute Value |
|
STMicroelectronics |
| Product Category: |
IGBTs |
| RoHS: |
|
|
Si |
|
TO-247-3 |
|
Through Hole |
|
Single |
|
650 V |
|
2 V |
|
- 20 V, 20 V |
|
80 A |
|
375 W |
|
- 55 C |
|
+ 175 C |
|
STGWA60H65DFB |
|
Tube |
| Brand: |
STMicroelectronics |
| Continuous Collector Current: |
80 A |
| Continuous Collector Current Ic Max: |
80 A |
| Gate-Emitter Leakage Current: |
250 nA |
| Height: |
5.15 mm |
| Length: |
20.15 mm |
| Operating Temperature Range: |
- 55 C to + 175 C |
| Product Type: |
IGBT Transistors |
|
600 |
| Subcategory: |
IGBTs |
| Width: |
15.75 mm |
| Unit Weight: |
1.340411 oz |
